document.write( "<CENTER><TABLE WIDTH=100% BORDER=1 CELLPADDING=5 CELLSPACING=0 BORDERCOLOR=#663333><TR BGCOLOR=#663333><TD HEIGHT=30 ALIGN=right><FONT COLOR=white SIZE=+1>Today's Paper</FONT>　<FONT COLOR=lightgrey> published (online)/received/accepted/etc on May 3 （1 publications）《WoS citation》<INPUT TYPE=button VALUE='Publication Page' ONCLICK=location.href='/cgi-bin/publication/db_publication_e.cgi?check_05=CHECKED&order=descent&showCitation=CHECKED'></FONT></TD></TR></TABLE></CENTER><CENTER><TABLE WIDTH=100% BORDER=1 CELLPADDING=3 CELLSPACING=0 BORDERCOLOR=#663333 TITLE='Tungsten trioxide (WO3) thin film electrodes with platelike structures were prepared by a facile hydrothermal reaction of tungsten sheets in a dilute nitric acid solution at 100-180 deg C and subsequent calcination at 450 deg C. The calcination step facilitated the transformation of the crystal structure from tungsten oxide hydrates (WO3・3H2O or WO3・2H2O) to monoclinic WO3 without significant modification to the platelike structures. The photoelectrochemical performance of the thin film electrodes for water splitting that took place in a dilute sulfuric acid was strongly dependent on both temperature and the time used for the hydrothermal reaction. This suggests that the thickness of the film influences the process of photoexcited electron transport. The time required for the hydrothermal reaction under higher temperatures was reduced in the generation of thin film electrodes with high photoelectrode activity, because the crystal growth is accelerated at high temperatures and the electron transport is restricted by a relatively thick compact layer that is comprised of WO3 nanoparticulates. The electrode exhibited sensitivity to the violet portion of the visible light spectrum due to the bandgap of 2.8 eV and high photoelectrode efficiency, as well as an incident photon-to-current conversion efficiency (IPCE) of 66.2%, for the photoelectrochemical oxidation of water.'><TR BGCOLOR=#663333><TD COLSPAN= VALIGN=middle popup_e> <SPAN CLASS=large><FONT COLOR=white><A NAME=''></A>■ ACHEN・2011 (letter)　《71》 VISIBL_B［first submission 2011/05/03］</FONT> </SPAN></TD></TR><TR><TD VALIGN=middle BGCOLOR=#FFFFDD><B>Amano, F.</B>*; Tian, M.; Chen, A.; <B>Ohtani, B.</B>, Facile Preparation of Platelike Tungsten Oxide Thin Film Electrodes with High Photoelectrode Activity, <I>ACS Appl. Mater. Interfaces</I>, <B>3</B>, 4047-4052 (2011).* [<A HREF='http://dx.doi.org/10.1021/am200897n'>DOI</A>] ●天野助教（当時）がカナダレイクヘッド大学のAicheng Chen教授（現在はゲルフ（Guerph）大学）の研究室に短期滞在しておこなった国際共同研究．　　　</TD></TR></TABLE></CENTER>" )